![]() ![]() To overcome this problem Power Field Effect Transistors or Power FET’s where developed.V While connecting together various MOSFETS in parallel may enable us to switch high currents or high voltage loads, doing so becomes expensive and impractical in both components and circuit board space. We also saw that due to this very high input (Gate) resistance we can safely parallel together many different MOSFETS until we achieve the current handling capacity that we required. We saw previously, that the N-channel, Enhancement-mode MOSFET (e-MOSFET) operates using a positive input voltage and has an extremely high input resistance (almost infinite) making it possible to use the MOSFET as a switch when interfaced with nearly any logic gate or driver capable of producing a positive output. ![]()
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